High voltage GaN Schottky rectifiers

High voltage „450 V... GaN Schottky rectifiers

We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a curr...

InAs=InGaP=GaAs heterojunction power Schottky rectifiers

A low-temperature (LT) grown InAs epi-layer has been applied as the gate to the dual-material structure of lattice-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier utilises the strong thermal stability of the InAs=InGaP heterojunction and t...

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

GaN-Based Schottky Varactors for High-Power RF Applications

Breakdown behaviour of high-voltage GaN-HEMTs